216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

E3 - Cleaning Technology in Semiconductor Device Manufacturing 11

Electronics and Photonics
 

Monday, October 5, 2009

Hall M, Level 01 - Green

Keynote presentation

Co-Chairs: J. Ruzyllo and R. Novak
TimeAbs#Title and Authors
09:00   2055   Nonaqueous/Dry Cleaning Technology Without Causing Damage to Fragile Fine Structures T. Hattori (Hattori Consulting International)
 

Cleaning in High-k Dielectric Processing

TimeAbs#Title and Authors
09:40   2056   Study of the Interplay Between Dry Etch and Wet Clean in Patterning La2O3/HfO2 Containing High-k/Metal Gate Stacks I. Vos (Imec), D. Hellin (Lam Research Corporation), C. Vrancken, G. Vecchio, V. Paraschiv (Imec), J. Vertommen (Lam Research Corporation), and W. Boullart (IMEC)
10:00   2057   Structural Changes of La2O3-Doped Hf-Based High-k Dielectrics during Aqueous HF Treatment Y. Sugita, T. Aoyama, and K. Ikeda (Semiconductor Leading Edge Technologies Inc.)
10:20   2058   New Wet Process Strategies for Reduced La2O3 and MgO2 High-k Cap-Dielectric Loss M. Wada, R. Vos, M. Claes, T. Schram (IMEC), J. Snow (DNS), P. Mertens (IMEC), and A. Eitoku (DNS)
 

Wafer Cleaning - General

Co-Chairs: R. Novak and J. Ruzyllo
TimeAbs#Title and Authors
10:40   2059   Reactive Gas/Wet Cleaning of Silicon Wafer Surfaces J. Vierhaus, C. Haase, J. Briesemeister, and E. Burte (Otto-von-Guericke University of Magdeburg)
11:00   2060   Drying Impact on Semiconductor Surfaces after Innovative Solvent Exposure Y. Le Tiec, F. Fournel (CEA-LETI-MINATEC), N. Rochat (CEA-LETI, MINATEC), J. Barnes, M. Veillerot, C. Morales, H. Moriceau, L. Clavelier (CEA-LETI-MINATEC), F. Rieutord (CEA-INAC), C. Morote, M. Vandenbossche, J. Butterbaugh (FSI International), and I. Radu (SOITEC)
11:20   2061   Characterization of the HCl Absorption and Outgassing Mechanisms by FOUPs' Polymers H. Fontaine (CEA-LETI), Y. Borde (STMicroelectronics Crolles), C. Brych, and A. Danel (CEA-LETI)
11:40   2062   Cleaning Process in Single Wafer Tool: Impact of Dispersion Phenomena on Rinsing Time A. Mallet (STMicroelectronics), M. Prat, P. Schmitz (University of Toulouse), and L. Broussous (STMicroelectronics)
12:00   2063   Solar Cell Texturing: A Simplified Recipe T. Vukosav (MicroTech Systems), P. Herrera (Micro Tech Systems), and K. Reinhardt (Cameo Consulting)
 

Back End of the Line Cleaning

Co-Chairs: T. Hattori and R. Vos
TimeAbs#Title and Authors
14:00   2064   Study of CMOS-Compatible Copper Etching for Organic Coating M. Lambert (NXP-TSMC Research Center), P. Rostam-Khani, J. Ten Veen, and L. Van Nimwegen (NXP Semiconductors)
14:20   2065   Influence of UV Irradiation on the Removal of Postetch Photoresist in Porous Low-k Dielectric Patterning E. Kesters, Q. Le, M. Lux (IMEC), L. Onandia (University of Basque Country), C. Baerts, and G. Vereecke (IMEC)
14:40   2066   Effect of Radical Scavenger on Removal of Photoresist and BARC using Water/Ozone in Cu/Low-k Interconnect Q. Le, M. Lux, E. Kesters, and G. Vereecke (IMEC)
15:00   2067   Impact of the Volatile Acid Contaminants on Cu Interconnects Electrical Performances H. Fontaine, H. Feldis, and A. Danel (CEA-LETI)
15:20   2068   Surfactants as an Additive to Wet Cleaning Solutions for Plasma Etch Residue Removal: Compatibility to a Porous CVD-SiCOH Ultra Low-k Dielectric Material N. Ahner, S. E. Schulz, and M. Zacher (Fraunhofer ENAS)
15:40   2069   SAM Modification of CMP Conditioner for the Prevention of Particle Adhesion T. Kwon, Y. Kang, I. Kim, D. Kim (Hanyang University), J. Kim, J. Chun, M. Park (Shinhan Diamond Industrial Co., Ltd), and J. Park (Hanyang University)
16:00   2070   Evaluation and Screening of Different Wet Cleaning Solutions on BEOL Applications S. Suhard, M. Claes, J. Loh, G. Vereecke, S. Demuynck, B. Vereecke, and G. Beyer (IMEC)
16:20   2071   Dilute HF Solutions for Copper Cleaning during BEOL Processes: Effect of Aeration on Selectivity and Copper Corrosion D. Padmanabhan Ramalekshmi Thanu, N. Venkataraman, S. Raghavan, and O. Mahdavi (University of Arizona)
16:40   2072   Using a Novel Solvent-based Technology to Preserve Low-κ Material when Removing Gap Fill Material C. Franklin, A. Rector, D. Pfettscher, K. Pollard, and D. Scheele (Dynaloy LLC)
17:00   2073   Influence of Subharmonics on Megasonic Cleaning A. Higuchi (Dainippon Screen Mfg. Co., Ltd.)
 

Tuesday, October 6, 2009

Hall M, Level 01 - Green

Resist Removal

Co-Chairs: P. Mertens and K. Reinhardt
TimeAbs#Title and Authors
08:00   2074   Yield Qualification of All Wet Photoresist Stripping for CMOS Well Loop Implant Masks in 300 mm High Volume Manufacturing R. Nan, F. Lee, J. Hung (SMIC Fab-8), J. M. Chu (FSI International), J. Yuan, D. Yang (FSI International Asia Ltd.), and J. Butterbauth (FSI International)
08:20   2075   Removal of Photoresist and BARC in Cu BEOL Using an All-Wet Process Q. Le (IMEC), A. Klipp (BASF), M. Lux, and G. Vereecke (IMEC)
08:40   2076   Lossless Solvent-Based Extension Implant Strip R. Vos, G. Mannaert, S. Halder, M. Wada (IMEC), R. Sonnemans (Axcelis), D. Tsvetanova, N. Valckx, K. Vanstreels, T. Conard, and P. Mertens (IMEC)
09:00   2077   Characterization of 248 nm Deep Ultraviolet Photoresist after Ion Implantation D. Tsvetanova, R. Vos, G. Vereecke, F. Clemente, K. Vanstreels, T. Conard (IMEC), T. N. Parac-Vogt (Katholieke Universiteit Leuven), P. Mertens, and M. M. Heyns (IMEC)
09:20   2078   Photoetching of Silicon by N-Fluoropyridinium Salt S. Goto, K. Tsukamoto, T. Kawase, N. Ajari (Osaka University), T. Nagai, K. Adachi (Daikin Indutries, Ltd.), J. Uchikoshi, and M. Morita (Osaka University)
09:40 Intermission (20 Minutes)
 

Physical Cleaning

Co-Chairs: K. Reinhardt and P. Mertens
TimeAbs#Title and Authors
10:00   2079   Investigation of Physical Cleaning Process Window by Atomic Force Microscope T. Kim, K. Wostyn, T. Bearda (IMEC), J. Park (Hanyang University), P. Mertens, and M. M. Heyns (IMEC)
10:20   2080   Particle Removal and Damage Thresholds from Particle Removal and Damage Formation Frequency for High-Velocity-Aerosol Cleaning K. L. Wostyn, M. Wada (IMEC), M. Andreas (3Micron Technology Inc, USA), K. Kenis, P. Roussel, T. Bearda, P. Leunissen, and P. Mertens (IMEC)
10:40   2081   Damage Cluster Analysis of Patterned Wafers during Solvent Spray Cleaning S. Halder, K. L. Wostyn (IMEC), M. Andreas (3Micron Technology Inc, USA), M. Wada, S. Brems, T. Bearda, A. Pacco, K. Kenis, R. Vos, and P. Mertens (IMEC)
11:00   2082   Comparison of Jet Spray and Megasonic Module for a Cleaning of Aluminum Layer Surface J. Min, N. Kim (Samsung Electronics), and T. Kim (Sungkyunkwan University)
11:20   2083   Impact of Steam-Water Mixed Spray on Silicon and Metal Surfaces T. Mashiko (Shizuoka University), A. Hayashida, Y. Yamada (Aqua Science Corporation), T. Sanada (Shizuoka University), and M. Watanabe (Hokkaido University)
11:40   2084   A Study on the Structure Collapse Mechanisms for High Aspect Ratio Structures with Application to Clean Processing D. Peter, F. Holsteyns, M. Dalmer, H. Kruwinus (Lam Research Corporation), A. Lechner (University of Applied Sciences Regensburg), and W. Bensch (Christian-Albrechts-Universität zu Kiel)
 

Invited Paper

Co-Chairs: P. Besson and K. Saga
TimeAbs#Title and Authors
13:40   2085   Cleaning and Strip Requirement for Metal Gate Based CMOS Integration T. Schram, S. Farid, M. Cleas, R. Vos, M. Wada, E. Rohr, and S. Kubicek (IMEC)
 

Megasonic Cleaning 1

TimeAbs#Title and Authors
14:20   2086   Water and Bubble Motions Under Megasonic Wave in a Silicon Wafer Wet Cleaning Bath H. Habuka, Y. Okada, R. Fukumoto, H. Yoshii (Yokohama National University), and M. Kato (Pre-Tech Co., Ltd)
14:40   2087   Reevaluation of Hydrogen Gas Dissolved Cleaning Solutions in Single Wafer Megasonic Cleaning B. Kang, S. Lee (Hanyang University), I. Kim, E. Choi, B. Kim (Siltron Inc.), A. Busnaina (Northeastern University), T. Hattori (Hattori Consulting International), and J. Park (Hanyang University)
15:00   2088   Development of a Single-Beam Megasonic System for Nanoparticle Cleaning H. Kim, Y. Lee, and E. Lim (Korea Institute of Machinery and Materials)
15:20   2089   Impact of Acoustical Reflections on Megasonic Cleaning Performance S. Brems, M. Hauptmann, E. Camerotto, A. Pacco, S. Halder (IMEC), A. Zijlstra (University of Twente), D. Geert, T. Bearda, and P. Mertens (IMEC)
15:40 Intermission (20 Minutes)
 

Megasonic Cleaning 2

Co-Chairs: K. Saga and P. Besson
TimeAbs#Title and Authors
16:00   2090   Megasonic Metrology for Enhanced Process Development S. Kumari, M. Keswani (University of Arizona), M. Beck, E. Liebscher (Product Systems Inc), T. Liang (Intel Corporation), P. Deymier, and S. Raghavan (University of Arizona)
16:20   2091   Damage-free Design of Megasonic Waveguide for Single Wafer Process Y. Ahn, D. Yu, J. Yang, A. Kulkarni (Sungkyunkwan University), J. Kim, H. Lee (Durasonic), and T. Kim (Sungkyunkwan University)
16:40   2092   Cleaning and Damage Performance of Single Wafer Cleaning Tools using Physical Removal Forces A. Pacco, S. Halder, K. Kenis, T. Bearda, and P. Mertens (IMEC)
17:00   2093   Removal of Post-Dry Etch Residue Using Ultralow Environmental Load Technique A. Hayashida, A. Seki (Aqua Science Corporation), T. Mashiko, T. Sanada (Shizuoka University), and M. Watanabe (Hokkaido University)
17:20   2094   Effect of Laser Shock Wave Cleaning Direction on Particle Removal Behavior at Trenchs J. Kim (Hanyang University), A. Busnaina (Northeastern University), and J. Park (Hanyang University)
 

Wednesday, October 7, 2009

Hall M, Level 01 - Green

MEMS Cleaning

Co-Chairs: J-G. Park and T. Hattori
TimeAbs#Title and Authors
08:20   2095   Ruthenium Wet Etch on 200 mm MEMS Wafers with Sodium Hypochlorite R. Segaud (CEA-LETI), L. Gabette (CEA-LETI MINATEC), O. Louveau (STMicroelectronics), and P. Besson (CEA-LETI)
08:40   2096   Gold Wet Etch Optimization on 200 mm Substrates for MEMS Applications L. Gabette (CEA-LETI MINATEC), R. Segaud (CEA-LETI), S. Fadloun (CEA-LETI MINATEC), X. Avale (SEMITOOL), and P. Besson (CEA-LETI)
09:00   2097   Cleaning-Free Deposition System Using Pulsed-Plasma CVD under Near-Atmospheric Pressure for Highly Crystallized Poly-Si Thin Films on Plastic Films M. Matsumoto, Y. Inayoshi, S. Murashige, H. Fukidome, M. Suemitsu (Tohoku University), S. Nakajima, T. Uehara (Sekisui Chemicals Co. Ltd), and Y. Toyosihima (ETRI, AIST)
09:20   2098   Etching of Sacrificial CVD Silicon Dioxides with Anhydrous HF Vapor H. Ritala and J. Kiihamäki (VTT Technical Research Centre of Finland)
09:40 Intermission (20 Minutes)
 

Metrology and Characterization

Co-Chairs: T. Hattori and J-G. Park
TimeAbs#Title and Authors
10:00   2099   Monitoring of Semiconductor Surfaces using Photoconductance Decay (PCD) Method P. Drummond, S. Ramani, and J. Ruzyllo (Pennsylvania State University)
10:20   2100   Metrology for Implanted Si Substrate and Dopant Loss Studies D. Radisic, D. Shamiryan, G. Mannaert, W. Boullart, E. Rosseel, and J. Bogdanowicz (IMEC)
10:40   2101   Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation K. Saga (Sony Semiconductor Kyusyu Corporation), K. Ueno, H. Iida, and R. Ohno (Sony Corporation)
11:00   2102   Electrochemical and Analytical Study of the Si Etching Mechanism in HF N. Valckx, R. Vos, J. Rip, G. Doumen, P. Mertens, T. Bearda, M. M. Heyns, and S. De Gendt (IMEC)
11:20   2103   Shockwave Induced Deformation of Organic Particle in Laser Shockwave Cleaning Process T. Kim, A. Busnaina (Northeastern University), and J. Park (Hanyang University)
11:40   2104   Non-reagent Real-Time Monitoring of DSP+ Cleaning Solutions E. Shalyt, J. Tyutina, G. Liang, G. Lu, and P. Bratin (ECI Technology)