216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

E4 - High Dielectric Constant Materials and Gate Stacks 7

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 5, 2009

Room J565 1/2, Level 01 - Green

Work Function/Flat-Band Voltage Control

Co-Chairs: Samares Kar and Paul Hurley
TimeAbs#Title and Authors
09:00 Introductory Remarks (10 Minutes)
09:10   2105   Anomalous VFB Shift in High-k Gate Stacks: Is Its Origin at the Top or Bottom Interface? A. Toriumi (University of Tokyo) and T. Nabatame (National Institute for Materials Science)
09:50   2106   Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device T. Koyanagi, K. Okamoto (Frontier Research Center, Tokyo Institute of Technology), K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, and H. Iwai (Tokyo Institute of Technology)
10:10   2107   Flatband Voltage and Structural Properties of Hafnium Dioxide Films Grown by Liquid-Injection MOCVD F. Ducroquet (CNRS, Minatec - Grenoble INP), E. Rauwel (LMGP, CNRS, Grenoble-INP), and C. Dubourdieu (INP-Minatec)
10:30   2108   Work Functional Control at High-k Metal Gates for CMOS Devices J. Robertson (Cambridge University)
 

Ge/III-V Channel Materials - I

Co-Chairs: Michel Houssa and Marc Heyns
TimeAbs#Title and Authors
11:10   2109   High-k Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for Advanced CMOS M. M. Heyns (IMEC), C. Adelmann (IMEC vzw.), G. Brammertz, M. Caymax, B. De Jaeger, A. Delabie, G. Eneman (IMEC), M. Houssa (K.U.Leuven), D. Lin, K. Martens, C. Merckling, M. Meuris, J. Mitard, J. Penaud, G. Pourtois, M. Scarrozza, E. Simoen, S. Sioncke, and W. Wang (IMEC)
11:40   2110   Electrical Properties of Lanthanum-Scandate Gate Dielectric Directly Deposited on Ge M. K. Bera, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai (Tokyo Institute of Technology)
12:00   2111   Effect of the Semiconductor Substrate Material on the Post-breakdown Current of MgO Dielectric Layers E. Miranda (Universitat Autonoma de Barcelona), E. O'Connor (University College Cork), G. Hughs, P. Casey (Dublin City University), K. Cherkaoui, S. Monaghan, R. Long (University College Cork), D. O'Connell, and P. Hurley (Tyndall National Institute)
12:05   2112   InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric C. Chang (National Chiao Tung University), E. Chang (National Chiao-Tung University), W. Huang (National Chiao Tung University), Y. Su, H. Trinh (National Chiao-Tung University), H. Hsu (Yuan Ze University), and Y. Miyamoto (Tokyo Institute of Technology)
 

Ge/III-V Channel Materials - II

TimeAbs#Title and Authors
14:00 Award Ceremony (10 Minutes)
14:10   2113   Barrier Characterization at Interfaces of High-Mobility Semiconductors with Oxide Insulators V. V. Afanas'ev and A. Stesmans (University of Leuven)
14:40   2114   Defects Generation under Constant Voltage Stress in La2O3/HfO2 Gate Stacks Grown on Ge Substrates E. K. Evangelou (University of Ioannina), M. S. Rahman (Univ. of Ioannina), A. Dimoulas, and S. Galata (NCSR)
15:00   2115   Capacitance-Voltage and Conductance Analysis of High-k/InxGa1-xAs Structures (x = 0, 0.15, 0.3, and 0.53) P. K. Hurley, E. O'Connor, S. Monaghan, R. Long (University College Cork), A. O'Mahony, I. M. Povey (Tyndall National Institute), K. Cherkaoui (University College Cork), M. Pemble (Tyndall National Institute), J. MacHale, A. Quinn (University College Cork), G. Brammertz, M. M. Heyns (IMEC), S. Newcomb (Glebe Scientific Ltd), and V. V. Afanas'ev (University of Leuven)
 

High-k Materials: Processing & Characterization - I

Co-Chairs: Sven Van Elshocht and Akira Toriumi
TimeAbs#Title and Authors
15:50   2116   Modeling of Alternative High-k Dielectrics for Memory Based Applications G. Pourtois, S. Clima, K. Sankaran (IMEC), P. Delugas (IMN-CNR), V. Fiorentini (INFM, University of Cagliari), W. Magnus, B. Soree, S. Van Elshocht, C. Adelman, J. Van Houdt, D. Wouters, S. De Gendt, M. M. Heyns, and J. Kittl (IMEC)
16:20   2117   Dielectric Properties of Thin Hf- and Zr-Based Alkaline Earth Perovskite Layers G. Lupina, P. Dudek, G. Kozłowski, J. Dąbrowski, G. Lippert, H. Müssig, and T. Schroeder (IHP)
16:40   2118   Stable HfO2 Based Layers Fabricated by RF Magnetron Sputtering L. Khomenkova (CIMAP, UMR CNRS 6252, ENSICAEN), C. Dufour (CIMAP, UMR CNRS 6252, ENSICAEN, 6 Bd Marechal Juin, Caen 14050, France), P. Coulon, C. Bonafos (CEMES/CNRS, 29 rue J. Marvig, Toulouse 31055 , France), and F. Gourbilleau (CIMAP, UMR CNRS 6252, ENSICAEN, 6 Bd Marechal Juin, Caen 14050, France)
17:00   2119   Surface-Directed Spinodal Decomposition in Hf Silicate Thin Films J. Liu, W. Lennard (University of Western Ontario), D. Landheer (Institute for Microstructural Sciences, National Research Council), and X. Wu (National Research Council of Canada)
17:20   2120   Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively Coupled High-Density Plasmas Using a Dual Rotated Spiral Antenna System J. Ji (Ajou University), Y. Kim, S. Woo, H. Kim, P. Um (Eugene Technology), and C. Kim (Ajou University)
17:25   2121   Nitrogen Incorporation in Al2O3 Thin Films Prepared by Pulsed Ultrasonic Sprayed Pyrolysis S. Carmona-Tellez (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), C. Palacio (Universidad Autonoma de Madrid), S. Gallardo, Z. Rivera (CINVESTAV-IPN, Apdo. Postal 14-740, 07000, Mexico, D.F., Mexico), J. Guzman-Mendoza, M. Aguilar-Frutis (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), M. Garcia-Hipolito (IIM-UNAM, Coyoacan 04510, Mexico, D.F., Mexico), G. Alarcon-Flores (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), and C. Falcony (CINVESTAV-IPN)
17:30   2122   Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100)/Si(100) Structures using Absorption Electron Imaging System T. Inoue and S. Shigenari (Iwaki Meisei University)
 

Tuesday, October 6, 2009

Room J565 1/2, Level 01 - Green

DRAM

Co-Chairs: Souvik Mohapatra and Dolf Landheer
TimeAbs#Title and Authors
08:30   2123   High Density MIM Capacitors Using HfAlOx M. K. Hota, C. Mahata (IIT Kharagpur), C. K. Sarkar (Jadavpur University), and C. Maiti (IIT Kharagpur)
08:50   2124   Physical and Electrical Characterization of Fluorine Plasma Treated Hafnium Oxide Film for High Density Metal-Insulator-Metal Capacitors S. Ding, Y. Huang, Q. Sun, and W. Zhang (Fudan University)
09:10   2125   Group-II Hafnate, Zirconate, and Tantalate High-k Dielectrics for MIM Applications: The Defect Issue J. Dąbrowski, P. Dudek, G. Kozłowski, G. Lupina, G. Lippert, and C. Wenger (IHP)
09:40   2126   Impact of Voltage and Current Stress on TiN/HfSixOy/TiN MIM Capacitors K. Jyothi, A. Chandorkar (Indian Institute of Technology Bombay, India), and D. Misra (New Jersey Institute of Technology)
 

Ge/III-V Channel Materials - III

Co-Chairs: Michel Houssa and Sanjay Banerjee
TimeAbs#Title and Authors
10:00   2127   Progress Towards Passivation of High-Mobility Channels M. Houssa (K.U.Leuven), V. V. Afanas'ev, A. Stesmans (University of Leuven), M. Meuris, and M. M. Heyns (IMEC)
10:40   2128   Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure K. Funamizu (FRC,Tokyo Institute of Technology), Y. Lin (National Chiao Tung University), K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii (Tokyo Institute of Technology), E. Chang (National Chiao-Tung University), T. Hattori, and H. Iwai (Tokyo Institute of Technology)
11:00   2129   Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High-k Dielectrics A. Ali, H. Madan (Penn State University), S. Koveshnikov (SUNY Albany), and S. Datta (Penn State University)
11:30   2130   High-k Dielectrics for Ge, III-V and Graphene MOSFETs S. K. Banerjee, E. Tutuc, S. Kim, T. Akyol, M. Jamil, D. Shahredji, J. Donnelly (University of Texas), and L. Colombo (Texas Instruments)
12:00   2131   Low Temperature Fabrication of AlN/Ge Structure Using Electron Cyclotron Resonance Plasma Nitridation J. Kishiwada, N. Mohamed, Y. Oniki, Y. Iwasaki, and T. Ueno (Tokyo University of Agriculture and Technology)
 

Interfaces

Co-Chairs: Samares Kar and Valery Afanasiev
TimeAbs#Title and Authors
14:00   2132   Interface Engineering of a Metal/ High-k/ Semiconductor Layered Structure by Water Vapor Discharge K. Muraoka (Toshiba Corporation)
14:30   2133   Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure H. Nohira, Y. Kon, K. Kitamura (Tokyo City University), M. Kouda, K. Kakushima, and H. Iwai (Tokyo Institute of Technology)
14:50   2134   Comparison of Lateral Nonuniformity Phenomena Between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region J. Cheng (National Taiwan University), C. Huang (Department of Electrical Engineering, National Taiwan University), and J. Hwu (National Taiwan University)
15:10   2135   Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation H. Nakayama (Interdisciplinary Graduate shool of Scrence and Engineering), K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai (Tokyo Institute of Technology)
15:30   2136   Interface Defects at the Si(100)/HfO2 Interface using DLTS Measurement D. Kwak, D. Kim, C. Shin (Dongguk University), H. Kim (Doowon Technical College), and H. Cho (Dongguk University)
 

High-k Materials: Processing & Characterization - II

Co-Chairs: Hiroshi Iwai and Kouichi Muraoka
TimeAbs#Title and Authors
16:00   2137   Solution-Based Fabrication of High-k Dielectrics Using Oxide Nanosheets M. Osada, K. Akatsuka, Y. Ebina (National Institute for Materials Science), H. Funakubo (Tokyo Institute of Technology), K. Takada, and T. Sasaki (National Institute for Materials Science)
16:20   2138   Atomic Layer Deposition of ZrO2, TiO2, and ZrTiO4 Thin Films K. Opsomer, M. Schaekers (IMEC), G. Rampelberg (University of Ghent), D. Deduytsche, C. Detavernier (Ghent University), and J. Kittl (IMEC)
16:40   2139   Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon A. Nazarov, V. Lysenko (Inst. of Semicond. Phys. NAS of Ukraine), Y. V. Gomeniuk, Y. V. Gomeniuk (Inst. of Semicond. Phys., NAS of Ukraine), H. Osten, and A. Laha (Institute of Electronic Materials and Devices, Leibniz University of Hannover)
16:45   2140   Residual Stress Effect on the Dielectric Properties of La0.7Sr0.3CoO3 Buffered (Ba,Sr)TiO3 Thin Films S. Lu and Z. Xu (City University of Hong Kong)
16:50   2141   Characteristics of Plasma Nitridation in Inductively Coupled High-Density Plasmas Using a Dual Rotated Spiral Antenna System S. Woo, Y. Kim, H. Kim, P. Um (Eugene Technology), S. Cho, and C. Kim (Ajou University)
 

Wednesday, October 7, 2009

Room J565 1/2, Level 01 - Green

Electrical Characterization & Reliability

Co-Chairs: Durga Misra and Paul Hurley
TimeAbs#Title and Authors
08:30   2142   Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors C. Wang and J. Hwu (National Taiwan University)
08:50   2143   Long TDDB Lifetime of SiO2 Film by Controlling Degradation Rate and SiO2/Si Microroughness Y. Kabe, J. Kitagawa, Y. Hirota (Tokyo Electron AT Ltd.), S. Sato, M. Sometani, R. Hasunuma, and K. Yamabe (University of Tsukuba)
09:10   2144   C-V and DLTS of ALD HfO2 on s-Si/SiGe/Si: Effects of s-Si Thickness and Surface Nitridation L. Yu, G. George Rozgonyi (North Carolina State University), P. Shrestha (Old Dominion Univ.), D. Gu, and H. Baumgart (Old Dominion University)
09:30   2145   Effects of the Inductively Coupled Plasma Nitridation Process on the Reliability of HfAlOx Thin Films K. Chang (Electronics), B. Chen (National Chiao Tung University), and M. Su (Electronics)
09:35 Intermission (25 Minutes)
10:00   2146   Nature of Interface Traps in Si/SiO2/HfO2 /TiN Gate Stacks and Its Correlation with the Flatband Voltage Roll-Off S. Kar (Indian Institute of Technology)
 

Exploratory Applications

Co-Chairs: Dolf Landheer and Albert Chin
TimeAbs#Title and Authors
10:20   2147   Transition Metal Binary Oxides for ReRAM Applications S. Spiga, E. Cianci, A. Lamperti, E. Magni, and M. Fanciulli (CNR-INFM, Laboratorio Nazionale MDM)
10:50   2148   Demonstration of Transconductance Enhancement on (110) and (100) Strained-Nanowire FETs A. Seike, H. Takai, I. Tsuchida (Waseda University), J. Masuda, D. Kosemura, A. Ogura (Meiji University), T. Watanabe, and I. Ohdomari (Waseda University)
11:10   2149   Electrochemical Reactions in Nanoionics: Towards Future Resistive Switching Memories R. Waser (FZ Juelich) and I. Valov (Science Centre Juelich)
11:40   2150   Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature I. Tsuchida, A. Seike, H. Takai (Waseda University), J. Masuda, D. Kosemura, A. Ogura (Meiji University), T. Watanabe, and I. Ohdomari (Waseda University)
 

Non-Volatile Memory

Co-Chairs: Durga Misra and Suman Datta
TimeAbs#Title and Authors
14:00   2151   Improved Device Characteristics in Charge-Trapping-Engineered Flash Memory Using High-k Dielectrics A. Chin (National Chiao Tung University), S. Lin (National Tsing Hua University), C. Tsai (National Chiao Tung University), and F. Yeh (National Tsing Hua University)
14:30   2152   Failure Analysis of Single and Dual nc-ITO Embedded ZrHfO High-k Nonvolatile Memories C. Yang (Texas A&M University and University of Tennessee), Y. Kuo, and C. Lin (Texas A&M University)
14:50   2153   Nonvolatile Memory Capacitors Based on Double Au Nanocrystals and High-k Tunneling (HfO2) and Control (HfNO/HfTiO) Layers V. Mikhelashvili, B. Meyler, J. Salzman, M. Garbrecht, W. Kaplan, and G. Eisenstein (Technion - Israel Institute of Technology)
15:10   2154   Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories X. Zhu (National Institute of Standards and Technology and George Mason University), D. Gu (Old Dominion University), Q. Li (National Institute of Standards and Technology and George Mason University), H. Baumgart (Old Dominion University), D. Ioannou (George Mason University), J. Suehle, and C. Richter (National Institute of Standards and Technology)
15:30   2155   Metal / High-k / Metal Nanocrystal / SiO2 Gate Stacks for NAND Flash Applications S. Mahapatra and P. K. Singh (IIT Bombay)
16:00   2156   Role of Nitride Traps in NBTI of Charge Trap Flash Memory with Oxide-Nitride-Al2O3 (ONA) Structures D. Kim, D. Kwak, C. Shin (Dongguk University), W. Kim (Doowon College), and H. Cho (Dongguk University)
16:05 Concluding Remarks (20 Minutes)
 

Gallery, Level 01 - Green

Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o   2111   Effect of the Semiconductor Substrate Material on the Post-breakdown Current of MgO Dielectric Layers E. Miranda (Universitat Autonoma de Barcelona), E. O'Connor (University College Cork), G. Hughs, P. Casey (Dublin City University), K. Cherkaoui, S. Monaghan, R. Long (University College Cork), D. O'Connell, and P. Hurley (Tyndall National Institute)
o   2112   InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric C. Chang (National Chiao Tung University), E. Chang (National Chiao-Tung University), W. Huang (National Chiao Tung University), Y. Su, H. Trinh (National Chiao-Tung University), H. Hsu (Yuan Ze University), and Y. Miyamoto (Tokyo Institute of Technology)
o   2120   Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively Coupled High-Density Plasmas Using a Dual Rotated Spiral Antenna System J. Ji (Ajou University), Y. Kim, S. Woo, H. Kim, P. Um (Eugene Technology), and C. Kim (Ajou University)
o   2121   Nitrogen Incorporation in Al2O3 Thin Films Prepared by Pulsed Ultrasonic Sprayed Pyrolysis S. Carmona-Tellez (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), C. Palacio (Universidad Autonoma de Madrid), S. Gallardo, Z. Rivera (CINVESTAV-IPN, Apdo. Postal 14-740, 07000, Mexico, D.F., Mexico), J. Guzman-Mendoza, M. Aguilar-Frutis (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), M. Garcia-Hipolito (IIM-UNAM, Coyoacan 04510, Mexico, D.F., Mexico), G. Alarcon-Flores (CICATA-IPN, Miguel Hidalgo 11500, Mexico, D.F., Mexico), and C. Falcony (CINVESTAV-IPN)
o   2122   Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100)/Si(100) Structures using Absorption Electron Imaging System T. Inoue and S. Shigenari (Iwaki Meisei University)
o   2126   Impact of Voltage and Current Stress on TiN/HfSixOy/TiN MIM Capacitors K. Jyothi, A. Chandorkar (Indian Institute of Technology Bombay, India), and D. Misra (New Jersey Institute of Technology)
o   2136   Interface Defects at the Si(100)/HfO2 Interface using DLTS Measurement D. Kwak, D. Kim, C. Shin (Dongguk University), H. Kim (Doowon Technical College), and H. Cho (Dongguk University)
o   2139   Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon A. Nazarov, V. Lysenko (Inst. of Semicond. Phys. NAS of Ukraine), Y. V. Gomeniuk, Y. V. Gomeniuk (Inst. of Semicond. Phys., NAS of Ukraine), H. Osten, and A. Laha (Institute of Electronic Materials and Devices, Leibniz University of Hannover)
o   2140   Residual Stress Effect on the Dielectric Properties of La0.7Sr0.3CoO3 Buffered (Ba,Sr)TiO3 Thin Films S. Lu and Z. Xu (City University of Hong Kong)
o   2141   Characteristics of Plasma Nitridation in Inductively Coupled High-Density Plasmas Using a Dual Rotated Spiral Antenna System S. Woo, Y. Kim, H. Kim, P. Um (Eugene Technology), S. Cho, and C. Kim (Ajou University)
o   2145   Effects of the Inductively Coupled Plasma Nitridation Process on the Reliability of HfAlOx Thin Films K. Chang (Electronics), B. Chen (National Chiao Tung University), and M. Su (Electronics)
o   2156   Role of Nitride Traps in NBTI of Charge Trap Flash Memory with Oxide-Nitride-Al2O3 (ONA) Structures D. Kim, D. Kwak, C. Shin (Dongguk University), W. Kim (Doowon College), and H. Cho (Dongguk University)