216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

E9 - State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials & Devices 10

Electronics and Photonics/Sensor
 

Tuesday, October 6, 2009

Room E558, Level OE - Yellow

Advanced materials & devices

Co-Chairs: E. Stokes, O. Ambacher
TimeAbs#Title and Authors
08:00   2320   Diamond FET Arrays for Biosensors and Bioelectronics J. A. Garrido, M. Dankerl, M. Hauf, A. Reitinger, and M. Stutzmann (Walter Schottky Institut, Technische Universität München)
08:40   2321   Development of Lateral Quantum Dots with Cryogenic Silicon Circuit Assisted Read-Out M. Carroll, E. Nordberg, T. Gurrieri, K. Eng, G. Ten Eyck, and M. Lilly (Sandia National Laboratories)
09:20   2322   Facet Specific Gold Tip Growth on Semiconductor Nanorod Assemblies C. O'Sullivan, S. Ahmed, R. Gunning, C. Barrett, H. Geaney, A. Sanyal, A. Singh, and K. Ryan (University of Limerick)
09:40 Intermission (20 Minutes)
10:00   2323   Novel Inorganic-Organic Hybrid Semiconductors with Extraordinary Properties Y. Zhang (The University of North Carolina)
10:40   2324   The Growth of Semiconductor and Dielectric Nanowire and Nanowire Arrays and their Plasmonic Applications. S. Prokes, L. Mazeina, D. Alexson, O. Glembocki, H. Park, H. Qi, and R. Rendell (Naval Research Lab)
11:20   2325   Electrochemical Sensing with Diamond Nanotips C. Nebel, N. Yang, and W. Smirnov (Fraunhofer Institute IAF)
 

III-nitrides

Co-Chairs: E. Kohn, JJ Huang
TimeAbs#Title and Authors
14:00   2326   Group III-Nitrides: From Bioelectronics to Nanosensors M. Eickhoff (I. Physikalisches Institut)
14:40   2327   Au Free Ohmic Contacts for High Temperature InAlN/GaN HEMTs M. Alomari, D. Maier (Institute of Electron Devices and Circuits (EBS)), J. Carlin, N. Grandjean (École Polytechnique Fédérale de Lausanne), M. Poisson, S. Delage (Alcatel-Thales III/V Lab), and E. Kohn (University of Ulm)
15:20   2328   Nanocrystal LEDs by Spray Layer-by-Layer Deposition T. Otto, P. Mundra, D. Dorfs, M. Schelter, J. Poppe, E. Frolova, V. Lesnyak, N. Gaponik, and A. Eychmüller (TU Dresden)
16:00   2329   Optoelectronic Properties of AlGaN-Films Studied by Means of Ellipsometry C. Cobet (ISAS - Institute for Analytical Sciences), C. Werner, M. Röppischer, N. Esser (Institute for Analytical Sciences), and R. Goldhahn (Technical University of Ilmenau)
16:40   2330   Defect Reduction through Confined Epitaxy of GaN on SiC J. Hite, C. R. Eddy Jr., and M. Mastro (U.S. Naval Research Laboratory)
17:20   2331   Characterizations of Sidewall Reflected GaN-Based LEDs Using Self-Aligned Nanorod Arrays as Localized Photonic Crystals Y. Cheng, K. Pan, L. Chen, M. Ke, C. Chen, and J. Huang (National Taiwan University)
17:40   2332   Enhanced Vertical Emission from GaN Based Light Emitting Diode with ZnO Nanorod Arrays Produced by Hydrothermal Method S. Dalui, C. Lin (Insititute of Microelectronics, National Cheng Kung University), H. Lee (Department of Electro-Optical Engineering, National Cheng Kung University), and C. Lee (National Cheng Kung University)
18:00   2333   Electron-Beam Evaporation of Distinctive Indium-Tin-Oxide Nanorods for Enhanced Light Extraction from InGaN/GaN Light Emitting Diodes C. Chiu, M. Tsai, P. Yu, and H. Kuo (National Chiao Tung University)
 

Gallery, Level 01 - Green

Poster

Co-Chairs: E. Stokes, C. O'Dwyer
TimeAbs#Title and Authors
o   2334   Strain Relaxation and Emission Characteristics of Size-Dependent InGaN/GaN Nanorod Arrays C. Chiu, P. Yu, H. Kuo (National Chiao Tung University), T. Lu, S. Wang (Institute of Electro-Optical Engineering,National Chiao Tung University), C. Chang, and Y. Wu (Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.)
o   2335   InGaN-Based Light-Emitting Diodes with the Photoelectrochemical Treated Microhole Array Structures C. Lin and C. Lin (National Chung Hsing University)
o   2336   Nanostructured Surface Morphology of ZnO Grown On A-Plane GaN C. Chen, C. Pan, F. Tsao, Y. Liu, G. Chi (National Central University), C. Chang (University of Florida), and T. Hsueh (National Cheng Kung University)
o   2337   Local Vibration Modes of N-H Related Complexes in GaAsN Grown by Chemical Beam Epitaxy H. Suzuki, T. Tanaka, Y. Ohshita, N. Kojima, and M. Yamaguchi (Toyota Technological Institute)
o   2338   Suppression of Leakage Current of AlGaN/GaN HEMT by HF Treatment Y. Choi, J. Lim, Y. Kim, and M. Han (Seoul National University)
 

Wednesday, October 7, 2009

Room E558, Level OE - Yellow

Oxide semiconductors

Co-Chairs: C. O'Dwyer, R. Goldhahn
TimeAbs#Title and Authors
08:00   2339   Effect of Doping on the Optical and Structural Properties of ZnO Thin Films Prepared by RF Diode Sputtering K. Shtereva (University of Rousse), V. Tvarozek (Slovak University of Technology), P. Sutta (West Bohemian University), I. Novotny, and A. Pullmannova (Slovak University of Technology)
08:40   2340   Wide Bandgap Oxide Semiconductors for Novel Functions and Applications S. Fujita, T. Oshima, and K. Kaneko (Kyoto University)
09:00   2341   High-Operating Current ZnO Based Thin Film Transistors with a Bilayer ZnO/GZO Channel K. Liu, H. Chiang, S. Hsiao, L. Su, L. Peng, and J. Huang (National Taiwan University)
09:20   2342   Fabrication and Characterization of Zinc Oxide Nanorods Based Heterojunction Devices using Simple Solution Method N. Reddy, S. Kim, E. Lee, and Y. Hahn (Chonbuk National University)
 

Silicon carbide

Co-Chairs: E. Stokes, G. Hunter
TimeAbs#Title and Authors
10:00   2343   SiC Power Device Technology: Differences to Silicon and Their Influence on Device Processing and Performance P. Friedrichs (SiCED GmbH & Co. KG)
10:40   2344   On the Driving Force of Shockley Stacking Fault Motion in 4H-SiC J. D. Caldwell, R. Stahlbush, M. Ancona (U.S. Naval Research Laboratory), O. Glembocki (Naval Research Lab), and K. Hobart (U.S. Naval Research Laboratory)
11:20   2345   Correlation of Substrate Quality and Epitaxial Layer Lifetime and Defectivity in 4H-SiC Homoepitaxy C. R. Eddy Jr. (U.S. Naval Research Laboratory), B. VanMil (Amethyst Research), K. Lew, R. Myers-Ward (U.S. Naval Research Laboratory), J. Tedesco (US Naval Research Laboratory), R. Stahlbush, J. D. Caldwell, and D. Gaskill (U.S. Naval Research Laboratory)
12:00   2346   4H-SiC on C-Plane Sapphire with C60 J. Li (UNC at charlotte), P. Batoni (UNC), and R. Tsu (UNCC)