216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

F3 - EuroCVD 17 and CVD 17

High Temperature Materials/Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 5, 2009

Hall F1, Level OE - Yellow

Fundamentals I

Co-Chairs:
TimeAbs#Title and Authors
10:00   2466   Hot Wire Chemical Vapor Deposition: Recent Progress, Present State of the Art and Competitive Opportunities R. E. Schropp (Utrecht University)
10:40   2467   Investigation of Triethylgallium Thermal Decomposition Using In Situ Raman Spectroscopy and DFT Calculations J. Lee, Y. Kim, and T. J. Anderson (University of Florida)
11:00   2468   Gas Phase Deposition and Characterization of (Si)-B-C Ceramics G. Chollon (LCTS), J. Berjonneau, and F. Langlais (LCTS (CNRS, Safran, CEA, UB1))
11:20   2469   A Density Functional Theory Study of Chlorosilanes Polymerization in Silicon Epitaxy D. Moscatelli, M. Dossi, A. Fiorucci, and M. Masi (Politecnico di Milano)
11:40   2470   Electrical Properties of Plasma-Deposited Silicon Oxide Clarified by Chemical Modeling A. Kovalgin, A. Boogaard, I. Brunets, T. Aarnink, and R. Wolters (University of Twente)
 

Fundamentals II

TimeAbs#Title and Authors
14:00   2471   Catalytic-CVD: Its Fundamentals and Application H. Matsumura and K. Ohdaira (Japan Advanced Inst. Sci. & Tech.)
14:40   2472   N Titania Thin Films, Prepared by Atmospheric Pressure Chemical Vapor Deposition: Enhanced Visible Light Photocatalytic Activity and Antimicrobial Effects C. W. Dunnill and I. Parkin (University College London)
15:00   2473   A Comparative Study of the Photoinduced Properties of TiO2/SiO2 and TiO2/ZnO/SiO2 Layers Prepared by Chemical Routes D. Vernardou, E. Spanakis (Technological Educational Institute of Crete), K. Vlachou, G. Kalogerakis (University of Crete), J. Costello (Tyndall National Institute), E. Koudoumas, N. Katsarakis (Technological Educational Institute of Crete), and M. Pemble (Tyndall National Institute)
15:20   2474   Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application M. Kolahdouz, E. Trybom, and H. Radamson (Royal Institute of Technology KTH)
15:40 Intermission (20 Minutes)
 

Fundamentals III

TimeAbs#Title and Authors
16:00   2475   Surface Chemistry Controlling Technology: Multiscale Spatial Behavior in Atomic Layer Deposition G. W. Rubloff, L. Henn-Lecordier, E. Cleveland, P. Banerjee, and I. Perez (University of Maryland)
16:40   2476   Multiscale Simulation and Optimization of an Atomic Layer Deposition Process in a Nanoporous Material V. Dwivedi and R. A. Adomaitis (University of Maryland)
17:00   2477   A Detailed Investigation of the Gas Phase and Surface Chemistry Active during the PECVD of nc-Silicon: A Detailed Model of the Gas Phase and Surface Chemistry C. Cavallotti, M. Rondanini, T. Moiseev, D. Chrastina, and G. Isella (Politecnico di Milano)
17:20   2478   A Comprehensive Insight in the MOCVD of Aluminum Through Interaction Between Reactive Transport Modeling and Targeted Growth Experiments T. C. Xenidou (National Technical University of Athens), N. Prud'Homme (CIRIMAT/ENSIACET), C. Vahlas (CIRIMAT), N. C. Markatos, and A. G. Boudouvis (National Technical University of Athens)
17:40   2479   Kinetic Modeling of Pyrocarbon Deposition Obtained by Propane Pyrolysis R. Lacroix, R. Fournet, I. Ziegler-Devin, and P. Marquaire (CNRS-INPL)
 

Hall F2, Level OE - Yellow

EuroCVD Posters I

TimeAbs#Title and Authors
o   2489   Atomospheric Pressure SiC Film Deposition at Low Temperatures Using SiH3CH3 and HCl Gases H. Habuka and H. Omori (Yokohama National University)
o   2490   Innovative M(Hfa)2•TMEDA (M = Co, Cu) Precursors for the CVD Of Copper-Cobalt Oxides: An Integrated Theoretical and Experimental Approach A. Gasparotto (Padova University and INSTM), D. Barreca (ISTM-CNR and INSTM - Department of Chemistry - Padova University, Italy), A. Devi, R. Fischer (Ruhr-University Bochum), E. Fois, A. Gamba (Insubria University and INSTM), C. Maccato (Padova University and INSTM), R. Seraglia (ISTM-CNR and INSTM), G. Tabacchi (Insubria University and INSTM), and E. Tondello (Padova University and INSTM)
o   2491   Influence of N2 and H2 Gas Flow Rates on Properties of n-Type Nanocrystalline 3C-SiC:H Thin Films Prepared by Hot-Wire Chemical Vapor Deposition A. Tabata, Y. Hoshide (Nagoya University), and A. Kondo (Gifu University)
o   2492   New Group of TiO2 CVD Precursors [Ti4O4(OtBu)4(OOCR')4], R' = tBu, C(Me)2Et, CH2tBu A. A. Radtke, P. Piszczek, T. Muzioł, A. Wojtczak, and W. Bartkowski (Nicolaus Copernicus University)
o   2493   PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF4 Precursor P. Sennikov, S. Golubev (Institute of Applied Physics), V. Shashkin, D. Pryakhin, B. Andreev, M. Drozdov (Institute for Physics of Microstructures), and H. Pohl (VITCON GmbH)
o   2494   AFM Study of PECVD DLC Films for Solar Selective Absorber S. Tinchev (IE BAS), A. Gusterov (2- FB18 Technische Physik, Universitet Kassel, Germany), P. Sharlandzhiev (3- CLOSPI, Bulgarian Academy of Sciences, Sofia 1113, Bulgaria), P. Nikolova, and Y. Dyulgerska (IE BAS)
o   2495   Correlation Between Plasma OES and Properties of B-doped Diamond Films Grown by MW PE CVD M. Belousov, V. Krivchenko, P. Minakov, A. Pal, A. Rakhimov, N. Suetin, and V. Sen' (Moscow State University)
o   2496   Functional Complex Oxides: Interplay between the Structure, Electrical Properties and Surface Reactivity N. Bahlawane, P. Tchoua Ngamou, and K. Kohse-Höinghaus (Bielefeld University)
o   2497   Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor D. Kim, O. Kim, H. Ajmera, T. J. Anderson, J. Koller, and L. McElwee-White (University of Florida)
o   2498   Variation in Properties CVD−ZnSxSe1-x with Composition D. V. Savin, E. Gavrishchuk, and V. Ikonnikov (Institute of Chemistry of High-Purity Substances of RAS)
o   2499   In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi, and K. Yasutake (Osaka University)
o   2500   Comparison of Diamond Deposition with Boron or Sulfur Addition R. Haubner (University of Technology Vienna)
o   2501   Barium Titanate Thin Film Growth by Low-Pressure Metallorganic Chemical Vapor Deposition T. Sekine, Y. Okumura, A. Satou, and Y. Akiyama (Tokai University)
o   2502   Formation of Silicon Nitride Layer on Microcrystalline Silicon Thin Films by Hot-Wire Chemical Vapor Method Using Nitrogen and Hydrogen Gases A. Tabata, K. Mazaki (Nagoya University), and A. Kondo (Gifu University)
o   2503   CVD of Pure Copper Films from Amidinate Precursor L. Aloui (CIRIMAT/ENSIACET), V. Krisyuk (Nikolaev Institute of Inorganic Chemistry), N. Prud'Homme, B. Sarapata, F. Senocq (CIRIMAT/ENSIACET), D. Samelor, and C. Vahlas (CIRIMAT)
o   2504   Reactor Scale Simulations of Boron and Boron Carbide Deposition G. Reinisch (University Bordeaux - LCTS), D. Alotta, N. Bertrand, G. Chollon, C. Descamps, and G. Vignoles (LCTS)
o   2505   Theoretical Study of the Gas-Phase System B/C/Cl/H for Boron Carbide Deposition G. Reinisch, J. Leyssale (University Bordeaux - LCTS), N. Bertrand (LCTS), C. Deschamps, and G. L. Vignoles (University Bordeaux - LCTS)
o   2506   La1-xSrxMnO3 Films on Perovskite and Technological Substrates: In Situ Growth by MOCVD from a Liquid Multimetal Source R. G. Toro (INSTM), D. Fiorito, G. Malandrino, and I. L. Fragalà (Università di Catania)
o   2507   Deposition of Metastable Nickel Nitride by CVD E. Lindahl, M. Ottosson, and J. Carlsson (Uppsala University)
o   2508   Effect of Ozone on Deposition of Titanium Oxide Films from Tetraisopropoxide S. Alexandrov, M. Barishnikova, L. A. Filatov, and V. Protopopova (Saint Petersburg State Polytechnical University)
o   2509   In Situ Investigation of the Processes of Precursor Adsorption by Means of Ellipsometry and Mass Spectrometry I. K. Igumenov, P. Prozorov, P. P. Semyannikov, and I. N. Zhukova (Nikolaev Institute of Inorganic Chemistry)
o   2510   Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High Frequency Plasma K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, and K. Yasutake (Osaka University)
o   2511   Texture and Residual Stress Analysis by XRD on Metastable Tetragonal Zirconia Films Obtained by MOCVD M. Jouili, M. Andrieux, I. Gallet, N. Prud'homme, and V. Ji (LEMHE-ICMMO-UPS)
o   2512   Novel Precursors for the MOCVD of Molybdenum Nitride T. Thiede, V. Gwildies, L. Alsamann, D. Rische, and R. Fischer (Ruhr-University Bochum)
o   2513   Alkylsilyl Compounds of Selenium and Tellurium: New Precursors for ALD T. Hatanpää, V. Pore, M. Ritala, and M. Leskelä (University of Helsinki)
o   2514   ALD TaN from PDMAT and NH3/H2 for Cu Diffusion Barriers V. Brize, P. Violet, F. Volpi, I. Nuta, A. Mantoux, R. Boichot, and E. Blanquet (SIMaP)
o   2515   Tuning the Thermal Properties of Hafnium Precursors by Tailoring the Ligands K. Xu, A. P. Milanov, and A. Devi (Ruhr-University Bochum)
o   2516   Photoluminescence Properties of Polar and Nonpolar ZnO Films Grown by Atmospheric-Pressure CVD Using Zn and H2O as Source Materials T. Terasako (Ehime University), K. Taniguchi (Takuma National College of Technology), K. Taira (Ehime University), M. Yagi (Takuma National College of Technology), and S. Shirakata (Ehime University)
o   2517   An Ab Initio RRKM/Master Equation Investigation of SiH4 and GeH4 Decomposition Kinetics Using a Kinetic Monte Carlo Approach C. Cavallotti, D. Polino, and A. Barbato (Politecnico di Milano)
o   2518   Rapid Thermal MOCVD of Undoped and Al Doped ZnO Thin Films A. E. Nebatti, C. Pflitsch, C. Eckert, and B. Atakan (University of Duisburg-Essen)
o   2519   Synthesis of Transparent ZrO2 Thin Films by MOCVD P. Cárcamo-León (Instituto Politecnico Nacional), A. Torres-Huerta (Instituto Politécnico Nacional), M. Domínguez-Crespo, and E. Ramírez-Meneses (Instituto Politecnico Nacional)
o   2520   Atomic Layer Deposition of Magnesium Oxide on GaAs A. O'Mahony, R. Chiodo, M. Nolan, J. Hamilton, I. M. Povey, and M. Pemble (Tyndall National Institute)
o   2522   The Application of Advanced Spectroscopic Diagnostics with Chemometric Modeling to Optimize Thin Film Properties Grown by Atmospheric Pressure PECVD D. Sawtell (University of Manchester), D. W. Sheel (University of Salford), and P. A. Martin (University of Manchester)
o   2523   Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multiscale Profiles of Growth Rate M. Sugiyama, S. Yasukochi, T. Shioda, Y. Shimogaki, and Y. Nakano (University of Tokyo)
o   2524   In Situ Monitoring of the Initial Nucleation for the Formation of Uniform InGaAs Microdiscs on Si M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama (University of Tokyo)
o   2525   A New Low-Melting Barium and Strontium Precursors for MOCVD Growth of BST Thin Films N. P. Kuzmina (Lomonosov Moscow State University), I. Malkerova, A. Alikhanyan (Kurnakov Institute of General and Inorganic Chemistry), D. Tsymbarenko (Moscow State University), O. Kreinin, G. Schuster, and E. Zolotoyabko (Materials Engineering Department of Technion)
o   2527   Atmospheric Pressure Chemical Vapour Deposition of Electrochromic Mo-W Oxide Films: Structure and Optoelectronic Properties T. Ivanova (Central Laboratory of Solar Energy and New Energy Sources), K. Gesheva (Bulgarian Academy of Sciences), S. Bojadjiev (Technical University of Sofia), M. Kalitzova (Institute of Solid State Physics), and O. Lebedev (Antwerp University)
o   2528   Effect of the Substrate Nature on the ALD ZrO2 Films Crystalline Structure D. Monnier, M. Gros-Jean, E. Deloffre (STMicroelectronics), B. Doisneau, S. Coindeau, A. Crisci (SIMaP), J. Roy, Y. Mi, B. Detlefs, J. Zegenhagen (ESRF), C. Wyon (CEA-LETI), C. Martinet (LPCML), F. Volpi, and E. Blanquet (SIMaP)
o   2529   Effect of H2 on the Microstructure and Properties of TiO2 Films Grown by Atmospheric Pressure MOCVD on Stainless Steel Substrates D. Duminica (CIRIMAT), F. Maury (CNRS-CIRIMAT), and R. Hausbrand (ArcelorMittal)
o   2530   Morphological and Structural Study of CVD MoO3-Cr2O3 Films T. Ivanova (Central Laboratory of Solar Energy and New Energy Sources), K. Gesheva (Bulgarian Academy of Sciences), S. Bojadjiev (Technical University of Sofia), and M. Kalitzova (Institute of Solid State Physics)
o   2531   On Gaseous Phase of ALD Precursors by Means of Thermodynamics P. Violet, I. Nuta, C. Chatillon, and E. Blanquet (SIMaP)
o   2532   Thermal Properties of Some Volatile Titanium(IV) Precursors E. S. Filatov (Nikolaev Institute of Inorganic Chemistry), H. Nizard (EADS Deutschland GmbH), P. P. Semyannikov, S. V. Sysoev, S. V. Trubin, N. B. Morozova, K. Zherikova, and N. V. Gelfond (Nikolaev Institute of Inorganic Chemistry)
o   2533   MOCVD of Zirconium Oxide from the Zirconium Guanidinate Complex [ZrCp′{η2-(iPrN)2CNMe2}2Cl] C. Blackman, C. Carmalt (University College London), H. Davies (SAFC Hitech Limited), S. Moniz (University College London), S. E. Potts (Eindhoven University of Technology), and D. Pugh (University College London)
o   2534   Online Control by IR Pyrometry of Nanostructured Multilayer CrCx/CrN Coatings Grown by MOCVD A. Douard, D. Samelor, S. Delclos, C. Tendero (CIRIMAT), and F. Maury (CNRS-CIRIMAT)
o   2535   Preparation and Physical Characterization of SnO2:Sb S. Haireche, A. Boumeddiene (Université Saâd Dahlab de Blida), A. Guittoum (Centre de Recherche Nucléaire d'Alger), A. El Hdiy (Universite de Reims Champagne ardenne), and A. Boufelfel (Université de Guelma)
o   2536   Microstructural Control of Zirconium Carbide Coating Prepared by Chemical Vapor Deposition W. Sun, X. Xiong, B. Huang, G. Li, H. Zhang, P. Xiao, Z. Chen, and X. Zheng (Central South University)
o   2537   High-Speed Growth and Characterization of AlN Polycrystalline Layers by High Temperature Chemical Vapor Deposition A. Claudel (ACERDE), E. Blanquet (SIMaP), D. Chaussende (LMGP), B. Doisneau (SIMaP), H. Mank (NOVASIC), D. Pique (ACERDE), and M. Pons (SIMAP)
o   2538   Preparation of Strontium Titanate Film by Low Pressure Chemical Vapor Deposition D. Kon, K. Hashiba, T. Kawashima, and Y. Akiyama (Tokai University)
o   2539   Novel N-Containing Precursors of Nickel(II) for Film Deposition by MOCVD K. Zherikova, N. B. Morozova (Nikolaev Institute of Inorganic Chemistry), A. S. Kil'metiev, L. N. Zelenina (Nikolaev Institute of Inorganic Chemistry, SB RAS 630090, Novosibirsk, Lavrentiev ave., 3, Russia), P. P. Semyannikov, N. V. Gelfond, T. P. Chusova, and I. K. Igumenov (Nikolaev Institute of Inorganic Chemistry)
o   2540   PECVD BCxNy Films from Mixtures of N-Trimethylborazine with Hydrogen and Ammonia: Modeling, Synthesis, and Characterization V. Sulyaeva (Nikolaev Institute of Inorganic Chemistry SB RAS), M. Kosinova (Nikolaev Institute of Inorganic Chemistry), A. Golubenko (Novosibirsk State University), Y. Rumyantsev (Nikolaev Institute of Inorganic Chemistry SB RAS), N. I. Fainer (Nikolaev Institute of Inorganic Chemistry), and F. A. Kuznetsov (Nikolaev Institute of Inorganic Chemistry SB RAS)
o   2541   In-Situ Infrared Spectroscopy of Hydrocarbons in a Pyrocarbon CVD Reactor M. Kawase, T. Ito, and K. Miura (Kyoto University)
o   2542   Modeling of the Gas Dynamic Processes During the Deposition of Nanolayers on the Surface of Submicrometer Channels of Porous Solids I. F. Golovnev, V. Fomin (Khristianovich Institute of Theoretical and Applied Mechanics), I. K. Igumenov, and B. M. Kuchumov (Nikolaev Institute of Inorganic Chemistry)
o   2543   Highly Conformal Film Growth by Chemical Vapor Deposition: A Zone Diagram Based on Kinetics A. Yanguas-Gil, N. Kumar (University of Illinois at Urbana-Champaign), Y. Yang (Cypress Semiconductor), and J. R. Abelson (University of Illinois at Urbana-Champaign)
o   2544   Effect of Ozone on Deposition of Silicon Oxide Films from Decamethylcyclopentasiloxane S. Alexandrov, L. A. Filatov, and A. Speshilova (Saint Petersburg State Polytechnical University)
o   2545   CVD Flow Field Modeling Using the Quiet Direct Simulation (QDS) Method H. Cave, C. Lim, M. Jermy (University of Canterbury), J. S. Wu (National Chiao-Tung University, Taiwan), M. Smith (National Centre for High Performance Computing, Taiwan), and S. Krumdieck (University of Canterbury)
o   2546   Dimethylgallium Isopropoxide as a New Volatile Source for ALD and MOCVD of Ga2O3 H. Lee, K. Kim, J. Woo, D. Jun, Y. Park, Y. Kim (Korea University), H. Lee, Y. Cho, and H. Cho (Korea Research Institute of Standards and Science)
o   2547   Investigation of Precursor Adsorption on Silicon Surface by Means of Molecular Dynamics I. N. Zhukova (Nikolaev Institute of Inorganic Chemistry), I. F. Golovnev (Khristianovich Institute of Theoretical and Applied Mechanics), I. K. Igumenov, P. P. Semyannikov, and E. S. Filatov (Nikolaev Institute of Inorganic Chemistry)
o   2548   Predictable Simple Reaction Model for Poly-Silicon LPCVD Process K. Kaneko (Fuji Electric Advanced Technology Co., Ltd.), M. Ogino (Fuji Electric Device Technology Co,. Ltd.), R. Shimizu (Fuji Electric Advanced Technology Co., Ltd.), Y. Shimogaki (University of Tokyo), and M. Koshi (The University of Tokyo)
o   2549   Impact of Small Deviations in EEDF on Silane-based Plasma Chemistry A. Kovalgin, A. Boogaard, and R. Wolters (University of Twente)
o   2550   Zinc Malonate Based Precursors for MOCVD of ZnO D. Bekermann, R. Fischer, and A. Devi (Ruhr-University Bochum)
o   2551   MOCVD of Gallium Oxide Thin Films Using Homoleptic Gallium Complexes: Precursor Evaluation and Thin Film Characterisation M. Hellwig, K. Xu (Ruhr-University Bochum), D. Barreca (ISTM-CNF), A. Gasparotto (Padova University and INSTM), B. Niermann, J. Winter, R. Fischer, and A. Devi (Ruhr-University Bochum)
o   2552   Growth of ZnO Nanowires by MOCVD: Fundamental Role of the Substrates C. Ternon (LTM - Grenoble-INP), G. Rey, M. Labeau, N. Thiré, C. Jimenez, and D. Bellet (LMGP - Grenoble-INP)
o   2553   MOCVD of Epitaxial Alkali-Earth Fluorides Thin Films A. V. Blednov, O. Gorbenko (Moscow State University), S. Samoilenkov (Lomonosov Moscow State University), R. Muydinov (IOT, TU Braunschweig), and A. Kaul (Moscow State University)
o   2554   Atmospheric Pressure CVD of Tin Oxide and Fluorine-Doped Tin Oxide T. Abendroth, H. Althues, and S. Kaskel (Fraunhofer IWS)
o   2555   In-Line Monitoring of Atmospheric Pressure Plasma Processes by Fourier Transform Infrared Spectroscopy M. Leistner, D. Linaschke, W. Graehlert, and S. Kaskel (Fraunhofer IWS)
o   2556   New Thin-Film BiFe1-xCoxO3 and BiFe1-xNixO3 Multiferroics: Preparation and Analysis of Structure A. Akbashev, E. Ganshina, T. Murzina, and A. Kaul (Moscow State University)
o   2557   Synthesis of ZnO-Ce2O3 Thin Films by APCVD A. Torres-Huerta, M. A. Domínguez-Crespo, S. Brachetti-Sibaja, and M. Hernández-Pérez (Instituto Politécnico Nacional)
o   2558   Development of an Automatic Modeling System of the Reaction Mechanisms for CVD Processes T. Takahashi and Y. Ema (Shizuoka University)
o   2559   New Complexes of Alkali-Metals as Precursors for MOCVD of Ferroelectric (K,Na)NbO3 Thin Films D. Tsymbarenko, I. Korsakov, A. Mankevich, and A. Kaul (Moscow State University)
o   2560   2D Species Concentration Mapping of Thermal AP-CVD Reactors for Monitoring, Control and Design D. Sawtell, V. Kasiutsich (University of Manchester), R. Holdsworth (TDL Sensors ltd.), D. W. Sheel (University of Salford), and P. A. Martin (University of Manchester)
o   2561   Epitaxial Heterostructures of KNbO3/LaNiO3/SrTiO3 and KNbO3/La1-xKxMnO3/SrTiO3: MOCVD Preparation and Properties I. Korsakov, A. Mankevich, D. Tsymbarenko (Moscow State University), A. M. Makarevich (Lomonosov Moscow State University), and A. Kaul (Moscow State University)
o   2562   Low-Temperature MOCVD of Epitaxial CaF2 and SrF2 Films A. M. Makarevich, A. Shсhukin, A. Markelov, S. Samoilenkov (Lomonosov Moscow State University), P. P. Semyannikov (Nikolaev Institute of Inorganic Chemistry), and N. P. Kuzmina (Lomonosov Moscow State University)
o   2563   Real Time Monitoring of the Transmittance/Reflectance during the Thermal Annealing of Amorphous Silicon N. Ota, T. Imamura (Saitama University), H. Shimizu (Saitama Industrial Technology Center), T. Kobayashi (The Institute of Physics and Chemical Reaserach), and H. Shirai (Saitama University)
 

Tuesday, October 6, 2009

Hall F1, Level OE - Yellow

Precursors I

Co-Chairs:
TimeAbs#Title and Authors
08:00   2480   MOCVD of Complex Oxide Systems: From Precursor Chemistry to Applications G. Malandrino (Università di Catania), R. G. Toro (INSTM), R. Lo Nigro (IMM-CNR), and I. L. Fragalà (Università di Catania)
08:40   2481   Remarkable Influence of Molecular structure of N,N'-Unsymmetrically Substituted 1,3-Amidinate and -Guanidinate on the Volatility and the Thermal Stability of Precursors for HfO2 Films via Liquid Injection MOCVD M. Eleter, S. Daniele (University Lyon 1), V. Brize (SIMaP), C. Dubourdieu (INP-Minatec), C. Lachaud, N. Blasco, and A. Pinchart (Air Liquide)
09:00   2482   Rare-Earth Based Oxide and Nitride Thin Films Employing Volatile Homoleptic Guanidinate Precursors A. P. Milanov, T. Thiede, H. Parala, C. Bock, H. Becker (Ruhr-University Bochum), D. Ngwashi, R. Cross, S. Paul (De Montfort University), U. Kunze, R. Fischer, and A. Devi (Ruhr-University Bochum)
09:20   2483   CaCu3Ti4O12 Thin Films for Capacitive Applications: MOCVD Synthesis and Nanoscopic/Microscopic Characterization R. Lo Nigro (IMM-CNR), R. G. Toro (INSTM), M. Catalano, G. Malandrino, I. L. Fragalà (Università di Catania), P. Fiorenza, and V. Raineri (IMM-CNR)
 

Precursors II

TimeAbs#Title and Authors
10:00   2484   Mechanism-Based Design of Precursors for MOCVD L. McElwee-White, J. Koller, D. Kim, and T. J. Anderson (University of Florida)
10:40   2485   Iron Amidinates as Precursors for the MOCVD of Iron-Containing Thin Films A. N. Gleizes (CIRIMAT, ENSIACET), V. Krisyuk (Nikolaev Institute of Inorganic Chemistry), L. Aloui (CIRIMAT/ENSIACET), A. E. Turgambaeva (Nikolaev Institute of Inorganic Chemistry), B. Sarapata, N. Prud'Homme, F. Senocq (CIRIMAT/ENSIACET), D. Samelor (CIRIMAT), A. Zielinska-Lipiec (AGH University of Science and Technology), F. Dumestre (NanoMePS), and C. Vahlas (CIRIMAT)
11:00   2486   Optimization of Ca Precursor Transport for High Vacuum Chemical Vapor Deposition (HV-CVD) L. Luo, Y. Kuzminykh (Ecole Polytechnique Fédéral de Lausanne), M. Catalano, G. Malandrino (Università di Catania), and P. Hoffmann (Ecole Polytechnique Fédérale de Lausanne)
11:20   2487   Conformal Chemical Vapor Deposition of Metal Oxide Thin Films from N,N-Dimethyldiboranamide Precursors A. Yanguas-Gil, N. Kumar (University of Illinois at Urbana-Champaign), S. Daly (Univerity of Illinois at Urbana-Champaign), G. Girolami (Univeristy of Illinois at Urbana-Champaign), and J. R. Abelson (University of Illinois at Urbana-Champaign)
11:40   2488   Analytical Characterization of BCxNy Films Grown with Trimethylamine Borane, Triethylamine Borane or Trimethylborazine Precursor O. Baake, P. S. Hoffmann, A. Klein (Technical University), B. Pollakowski, B. Beckhoff (Physikalisch-Technische Bundesanstalt), W. Ensinger (Technische Hochschule Darmstadt), M. Kosinova, N. I. Fainer, V. Sulyaeva, and V. Trunova (Nikolaev Institute of Inorganic Chemistry)
 

Wednesday, October 7, 2009

Hall F1, Level OE - Yellow

Industrial and New Applications, Devices I

Co-Chairs:
TimeAbs#Title and Authors
08:00   2564   Industrial Applications of ALD: Current Status and Future Perspectives M. Ritala (University of Helsinki)
08:40   2565   Novel CVD Strategies and Novel Chemical Precursors Enabling Low Temperature Epitaxy of Si and Si:C Alloys M. Bauer and S. Thomas (ASM America)
09:00   2566   A Conformal Oxide Liner for Through Silicon Vias by Pulsed SA-CVD Deposition E. Sleeckx, M. Schaekers, and E. Dürr (IMEC)
09:20   2567   Low Pressure Chemical Vapour Deposition as a Tool for Deposition of Thin Film Battery Materials J. Oudenhoven (Eindhoven University of Technology), T. Van Dongen, R. Niessen (Philips Research Laboratories Eindhoven), M. De Croon, and P. Notten (Eindhoven University of Technology)
 

Industrial and New Applications, Devices II

TimeAbs#Title and Authors
10:00   2568   Growth of Triple-Junction Solar Cells (TJ-SC) in an Optimized MOCVD Reactor M. Dauelsberg, J. Hofeldt, B. Schineller, and M. Heuken (AIXTRON AG)
10:40   2569   Atmospheric Pressure CVD: An Easy and Sustainable Method for Technical Surface Functionalization A. Schimanski, A. Heft, A. Pfuch, and K. Horn (Innovent e.V.)
11:00   2570   Optimization of Solar Cell Performance Using Atmospheric Pressure Chemical Vapour Deposition Deposited TCOs H. M. Yates, P. Evans, D. W. Sheel (University of Salford), U. Dagkaldiran, A. Gordijn, F. Finger (Forschungszentrum Julich GmbH), Z. Remes, and M. Vanecek (Academy of Sciences of the Czech Republic)
11:20   2571   Tungsten Coatings as a Protective Layer on Surfaces in Contact with Molten Metals P. Cosemans, W. Lauwerens, and F. Mampaey (Sirris)
11:40   2572   Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method T. Saito, K. Izumi, Y. Hirota, N. Okamoro, K. Kondo, T. Yoshimura, and N. Fujimura (Osaka Prefecture University)
 

Industrial and New Applications III

TimeAbs#Title and Authors
14:00   2573   Large Area PECVD Technology S. Choi and J. M. White (AKT/Applied Materials)
14:40   2574   Phosphorus and Boron Doping in Plasma Enhanced Chemical Vapor Deposition of Silicon Oxynitride Based Optical Waveguides F. Sun, G. Sengo, A. Driessen, and K. Wörhoff (University of Twente)
15:00   2575   Multiscale Simulations for Plasma Processing of Thin Films A. Bhoj, K. Shah (ESI), M. Megahed (ESI Group), P. Kothnur, and R. Kinder (Novellus Systems, Inc.)
15:20   2576   Investigation of Optical Properties and Photoluminescence of Amorphous Silicon Carbide in a-SiC/Si3N4 Quantum Well Structures Fabricated by PECVD Technique L. Kamyab, Rusli (Nanyang Technological University), M. Yu (Institue of Microelectronics), L. He, and M. Dua (Nanyang Technological University)
15:40 Intermission (20 Minutes)
 

Nanostructured Systems I

TimeAbs#Title and Authors
16:00   2577   Controlled Synthesis of Carbon Nanotubes by Various CVD and PECVD Methods J. Kpetsu, P. Jedrzejowsk, C. Côté, A. Sarkissian (Plasmionique Inc.), P. Merel, P. Laou, S. Désilets, S. Paradis (Defense Research & Development Canada - Valcartier), H. Liu, M. I. Ionescu, Y. Zhong, Y. Zhang, R. Li, and X. Sun (University of Western Ontario)
16:40   2578   Long and Aligned Multiwalled Carbon Nanotubes Grown on Carbon and Metallic Substrates by Injection-CVD Process M. Delmas, M. Pinault, D. Porterat, C. Reynaud, and M. Mayne-L'Hermite (CEA - Saclay)
17:00   2579   Influencing Factors Towards a Scalable Synthesis of Aligned Carbon Nanotubes by Chemical Vapor Deposition T. K. Karachalios and S. F. Nitodas (Nanothinx S.A.)
17:20   2580   CVD Growth of Carbon Nanotubes over Metal Free Catalyst Nanoparticles R. Smajda, M. Mionic, K. Gloystein, M. Duchamp (EPFL), J. Seo (Katholieke Universiteit Leuven), L. Forró, and A. Magrez (EPFL)
17:40   2581   Gas-Phase Synthesis of Hierarchical Carbon Structures and the Deposition of Pt Catalysts in a Fluidized-Bed Reactor W. Xia, C. Jin, B. Mei, S. Kundu, and M. Muhler (Ruhr University Bochum)
 

Hall F2, Level OE - Yellow

EuroCVD Posters II

TimeAbs#Title and Authors
o   2582   Photocatalytic Surfaces via Low Temperature Atmospheric Pressure Plasma J. L. Hodgkinson, H. M. Yates, and D. W. Sheel (University of Salford)
o   2583   Hybrid Aerosol Assisted Atmospheric Pressure Chemical Vapor Deposition: A Facile Route Toward Nanocomposite Thin Films? R. Binions (University College London), M. Saeli (Università degli Studi di Palermo), C. Piccirillo, and I. Parkin (University College London)
o   2584   Effects of APCVD Growth Conditions on the Photocatalytic Behavior of Titania Films H. M. Yates, P. Evans, and D. W. Sheel (University of Salford)
o   2586   Silicon Oxynitride Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS Devices R. Mroczyński and R. Beck (Institute of Microelectronics and Optoelectronics)
o   2587   Stabilized Zirconia-Based Materials for Solid Oxide Fuel Cells Obtained by MOCVD and Aerosol-CVD N. El Habra, M. Bolzan, C. De Zorzi, M. Favaro (ICIS-CNR), M. Casarin, C. Sada (Università degli Studi di Padova), and G. Rossetto (ICIS-CNR)
o   2588   Deposition of TiO2 Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors H. Davies (SAFC Hitech Limited), K. Black, A. Jones, J. Bacsa, P. Chalker, P. A. Marshall (Liverpool University), P. N. Heys (SAFC Hitech Limited), P. O'Brien (Manchester University), and M. Afzaal (University of Manchester)
o   2589   TiO2 Strelitzia-like Hybrid Nanocomposites Obtained by a Synergic Combination of Vapor Techniques S. Battiston (IENI-CNR), M. Bolzan (ICIS-CNR), M. Fabrizio (IENI-CNR), R. Gerbasi, P. Guerriero (ICIS-CNR), E. Miorin, C. Mortalò, C. Pagura (IENI-CNR), and F. Visentin (ICIS-CNR)
o   2590   Surface Modification of PMMA with DLC Using RF-PECVD P. K. Barhai, R. Sharma, A. Yadav, A. Singh (Birla Institute of Technology), H. Gaur, and V. Buck (University of Duisburg-Essen)
o   2591   AlGaN Multiple Quantum Wells and AlN Grown in a Hot-Wall MOCVD for Deep UV Applications A. Henry, A. Lundskog, J. Palisaitis, I. Ivanov, A. Kakanakova-Georgieva, U. Forsberg, P. Persson, and E. Janzén (Linköping University)
o   2592   Carbon Nanostructures Produced by High Pressure CVD V. Khavrus, E. Ibrahim, A. Leonhardt, A. Elgendy, S. Hampel, R. Klingeler, and B. Büchner (IFW Dresden)
o   2593   Comparative Study of SiNx and BNx Nanolayers Prepared by Different Chemical Vapour Deposition Methods G. Beshkov (Bulgarian Academy of Science), N. Nedev (Universidad Autónoma de Baja California), D. Spassov (Bulgarian Academy of Science), J. Terrazas, B. Salas (Universidad Autónoma de Baja California), and V. Krastev (Bulgarian Academy of Science)
o   2594   Photocatalytic Activity Dependence on the Structural Orientation of MOCVD TiO2 Anatase Films R. Gerbasi, M. Bolzan, N. El Habra, G. Rossetto (ICIS-CNR), L. Schiavi, and A. Strini (ITC-CNR)
o   2595   Growth of Carbon Nanotube Layers in a Thermal CVD Reactor on Substrates Prepared by Catalyst Spray Deposition M. Traxler and R. Haubner (University of Technology Vienna)
o   2596   Resistive Switching in Metal Oxide Films Deposited by Metallorganic Chemical Vapor Deposition T. Nakamura, K. Onogi, K. Homma, and K. Tachibana (Kyoto University)
o   2597   Deposition of Ir Nanostructured Thin Films by Pulse CVD N. V. Gelfond, P. P. Semyannikov, S. V. Trubin, N. B. Morozova, and I. K. Igumenov (Nikolaev Institute of Inorganic Chemistry)
o   2598   HfO2-High-k Dielectric for Nanoelectronics T. P. Smirnova, F. A. Kuznetsov, L. Yakovkina (Nikolaev Institute of Inorganic Chemistry SB RAS), V. Kaichev (Boreskov Institute of Catalysis), V. Kosyakov, M. Lebedev, and V. Kichai (Nikolaev Institute of Inorganic Chemistry SB RAS)
o   2599   Pulse CVD Deposition of Ru Films from Ru(II) ή3-Allylic Complex S. V. Trubin, N. B. Morozova, P. P. Semyannikov, A. Bessonov, N. V. Gelfond, and I. K. Igumenov (Nikolaev Institute of Inorganic Chemistry)
o   2600   Preparation of Iridium Thin Film by Pulse CVD from Ir(acac)(CO)2 P. P. Semyannikov, N. B. Morozova, K. Zherikova, S. V. Trubin, I. K. Igumenov, and N. V. Gelfond (Nikolaev Institute of Inorganic Chemistry)
o   2601   Initial Stages of Thermally and Hot-Wire Assisted CVD Copper on SiLK and LTO Substrates Activated with Mercaptopropyl Triethoxysilane Self-Assembled Monolayers G. Papadimitropoulos (Institute of Microelectronics), T. Speliotis (Institute of Materials Science), A. Arapoyianni (University of Athens), and D. Davazoglou (Institute of Microelectronics-NCSR)
o   2602   Capacitance-Voltage Analysis of ZrO2 Thin Films Deposited by MOCVD Technique T. A. Mih, S. Paul (De Montfort University), A. P. Milanov, and A. Devi (Ruhr-University Bochum)
o   2603   MOCVD of the (Al2O3)x(HfO2)1-x Films as Alternative Gate Dielectric for MIS Nanostructures T. P. Smirnova, M. Lebedev (Nikolaev Institute of Inorganic Chemistry SB RAS), V. Kaichev (Boreskov Institute of Catalysis), L. Yakovkina (Nikolaev Institute of Inorganic Chemistry SB RAS), N. B. Morozova, K. Zherikova, P. P. Semyannikov, and S. V. Trubin (Nikolaev Institute of Inorganic Chemistry)
o   2604   Low-Temperature VUV-Stimulated MOCVD Process of Palladium Layer Deposition B. M. Kuchumov, T. P. Koretskaya, Y. V. Shevtsov, S. V. Trubin, G. I. Zharkova, V. S. Danilovich, I. K. Igumenov (Nikolaev Institute of Inorganic Chemistry), and V. Kruchinin (Rzhanov Institute of Semiconductor Physics)
o   2605   Selective Growth of Carbon Nanotubes on Printed Fe3O4 Nanoparticles R. Haubner (University of Technology Vienna), W. Schwinger, B. Dittert, and R. Schöftner (Profactor GmbH)
o   2606   Synthesis of Carbon Nanotubes by Catalytic Chemical Vapour Deposition in a Fluidized Bed Reactor K. Danova, I. Jipa, U. Zenneck, and N. Popovska (University Erlangen-Nuremberg)
o   2607   Synthesis and Thermal Stability of Nanocomposite SiCxNy:H Films from Cycle Siliconorganic Precursor N. I. Fainer (Nikolaev Institute of Inorganic Chemistry), Y. Rumyantsev (Nikolaev Institute of Inorganic Chemistry SB RAS), V. Kesler (Institute of Semiconductor Physics SB RAS), E. Maximovski, and F. A. Kuznetsov (Nikolaev Institute of Inorganic Chemistry SB RAS)
o   2608   Pulsed MOCVD Processes of MgO Layer Deposition from Mg(thd)2 B. M. Kuchumov, Y. V. Shevtsov, P. P. Semyannikov, E. S. Filatov, and I. K. Igumenov (Nikolaev Institute of Inorganic Chemistry)
o   2609   Investigation of Tantalum Oxide Films Prepared by Atmospheric Pressure Chemical Vapour Deposition for Use as Water Splitting Photocatalysts G. Hyett, J. Darr (University College London), A. Mills (University of Strathclyde), and I. Parkin (University College London)
o   2610   Controlled Protein Adsorption on Nanostructured Zinc Oxide Thin Films Deposited by Colloidal Assisted-Low Temperature MOCVD M. Fragala (Università di Catania and INSTM UdR Catania), C. Satriano (Dipartimento di Scienze Chimiche and CSGI Università di Catania), and G. Malandrino (Università di Catania)
o   2611   Atmospheric Pressure Plasma Enhanced CVD of Fe Nanoparticles S. Alexandrov, I. Kretusheva, and M. V. Mishin (Saint Petersburg State Polytechnical University)
o   2612   Dynamics of Pulsed DC Discharges Used for PACVD of a-C:H:Si M. Traxler (University of Technology Vienna), A. Puchhammer, H. Störi (TU Wien), T. Müller (Ruebig GmbH & Co KG), and J. Laimer (TU Wien)
o   2613   Synthesis of ZnS Nanoparticles by Spray Pyrolysis: Morphology Control Using the Same Precursors in Different Reactor Systems S. Liu and M. T. Swihart (University at Buffalo (SUNY))
o   2614   Fabrication of ZnO Thin Film Transistor by MOCVD Using Bis(acetylacetonato)zinc(II) Fiber and Ozone M. Sakuma, S. Seki, and K. Haga (Sendai National College of Technology)
o   2615   Exploring Multiple Calcium Phosphate Precursors for Pulsed Pressure-MOCVD D. Clearwater, R. M. Hartshorn, and S. Krumdieck (University of Canterbury)
o   2616   VUV-Stimulated MOCVD Processes of Copper Layer Deposition I. K. Igumenov, B. M. Kuchumov, S. Kozlova, T. P. Koretskaya, S. V. Trubin, R. Sokuev (Nikolaev Institute of Inorganic Chemistry), V. Lyakh (Budker Institute of Nuclear Physics), and V. Kruchinin (Rzhanov Institute of Semiconductor Physics)
o   2617   Pulsed-Pressure MOCVD Processing Investigation for TiO2 Films on Si3N4 Substrate from TTIP V. Siriwongrungson, S. Krumdieck, and M. Alkaisi (University of Canterbury)
o   2618   Hierarchical Nanostructure Produced by Growing Carbon Nanotubes on Silicon Oxide Nanowires H. Woo, J. Kim, D. Choi, and C. S. Yoon (Hanyang University)
o   2619   Dynamic Study of Gas-Phase Species during Single-Walled Carbon Nanotubes Production by Chemical Vapor Deposition of Ethanol K. Kouravelou and X. Verykios (University of Patras)
o   2620   A Single-Step APCVD Route to Novel Dual Functionality: Self-Cleaning Biocidal Titania-Copper Films P. Evans, H. Foster, D. W. Sheel, A. Steele, and H. M. Yates (University of Salford)
o   2621   Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment V. Dřínek, R. Fajgar (Institute of Chemical Process Fundamentals), J. Subrt, and M. Klementová (Institute of Inorganic Chemistry)
o   2622   ArF Laser-Induced Deposition of Carbon Encapsulated CoFe Nanoparticles R. Fajgar (Institute of Chemical Process Fundamentals), Z. Bastl (J. Heyrovsky Institute of Physical Chemistry), J. Subrt, N. Murafa (Institute of Inorganic Chemistry), and M. Maryško (Institute of Physics)
o   2623   Strain Evaluation in SiC MEMS Test Structures M. Bosi, G. Attolini, B. E. Watts, C. Frigeri, F. Rossi (Consiglio Nazionale delle Ricerche), A. Poggi, A. Roncaglia, F. Mancarella (IMM-CNR), O. Martinez, and V. Hortelano (Universidad de Valladolid)
o   2624   Silver Films Deposited by Liquid-Delivery MOCVD Using (Tertbutylcarboxylate)(triethylphosphine)silver with Toluene as the Solvent M. Lisca, B. Kalkofen, M. Lisker, E. Burte (University Otto von Guericke Magdeburg), I. Szymańska, and E. Szłyk (Nicolaus Copernicus University)
o   2625   Vertical Aligned Carbon Nanotube Deposition on Metallic Substrates by CVD S. Doerfler, A. Meyer, H. Althues, I. Dani, and S. Kaskel (Fraunhofer IWS)
o   2626   Low Temperature Atmospheric Pressure CVD of Photoactive Titanium Dioxide T. Abendroth, H. Althues, B. Leupolt, and S. Kaskel (Fraunhofer IWS)
o   2627   Shape Optimization of a Showerhead System for the Control of Growth Uniformity in a MOCVD Reactor Using CFD-based Evolutionary Algorithms T. C. Xenidou (National Technical University of Athens), N. Prud'Homme, L. Aloui (CIRIMAT/ENSIACET), C. Vahlas (CIRIMAT), N. C. Markatos, and A. G. Boudouvis (National Technical University of Athens)
o   2628   Preparation of High Permittivity GdScO3 Films by Liquid Injection MOCVD K. Huseková, M. Jurkovič, K. Cico, D. Machajdik, E. Dobročka, R. Lupták, K. Fröhlich (Institute of Electrical Engineering, SAS), and A. Mackova (Nuclear Physics Institute, ASCR,)
o   2629   Plasma Composition and Kinetic Reaction Rates in a LEPECVD Ar-SiH4-H2 Plasma during Deposition of nc-Si Films for Photovoltaic Applications T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti (Politecnico di Milano)
o   2630   Memory Structures Based on the Self-Organization of Cu Nanoparticles Deposited by Hot-Wire CVD on Polythiophene Layers P. Dimitrakis, M. Vasilopoulou, L. Palilis, G. Papadimitropoulos, P. Normand, P. Argitis, and D. Davazoglou (Institute of Microelectronics-NCSR)
o   2631   CVD Elaboration of Nanometric Barium Silicate Films T. Geneves, L. Imhoff, B. Domenichini, and S. Bourgeois (Université de Bourgogne - CNRS)
o   2632   MOCVD Growth of MgZnO Nanotips Used for Hybrid Polymer Solar Cells Z. Duan, A. Pasquier, J. Zhong, and Y. Lu (Rutgers University)
o   2633   Doped Iron Oxide Thin Films for Photoelectrochemical Generation of Hydrogen from Water D. W. Sheel, J. Lewis, A. Robinson, and H. M. Yates (University of Salford)
o   2634   Combination of Electron or Laser Beam Irradiation with High Vacuum Chemical Vapor Deposition (HV-CVD) of Al2O3 for In Situ Local Structuring on Wafer Scale Substrate Y. Kuzminykh, X. Multon (Ecole Polytechnique Fédéral de Lausanne), and P. Hoffmann (Ecole Polytechnique Fédérale de Lausanne)
o   2635   Tailoring of Optical Properties of Alumina Films Deposited by High Vacuum CVD (HV-CVD) X. Multon, B. Afra, Y. Kuzminykh (Ecole Polytechnique Fédéral de Lausanne), and P. Hoffmann (Ecole Polytechnique Fédérale de Lausanne)
o   2636   Combustion-Driven Synthesis of Non-Oxide Nanoparticles in a High Temperature Reducing Jet W. J. Scharmach (SUNY at Buffalo), V. Papavassiliou, P. Pacouloute (Praxair Inc.), R. Buchner (SUNY at Buffalo), and M. T. Swihart (University at Buffalo (SUNY))
o   2637   Thin Films of Some Aromatic Terbium Carboxylates: Reactive CVD and Optical Properties O. Kotova, V. Utochnikova, S. Samoilenkov, and N. P. Kuzmina (Lomonosov Moscow State University)
o   2638   Gas Jet Synthesis of Nanosized Polymer-Silver Bactericid Compounds A. K. Rebrov, A. Safonov, and N. Timoshenko (Kutateladse Institute of Thermophysics)
o   2639   Microplasma Synthesis of Blue-White Luminescent Amorphous SiOC Films at Atmospheric Pressure Y. Ding, H. Shirai (Saitama University), F. Yuan (Chinese Academy of Sciences), and T. Kobayashi (The Institute of Physics and Chemical Reaserach)
o   2640   ZrO2 Thin Films Grown on 2D and 3D Silicon Surfaces by DLI-MOCVD for Electronic Devices K. Galicka-Fau (Univ. Paris Sud 11), M. Andrieux (LEMHE-ICMMO-UPS), C. Legros, M. Herbst-Ghysel (Univ. Paris Sud 11), I. Gallet (LEMHE-ICMMO-UPS), M. Brunet, E. Scheid (LAAS-CNRS Univ. Toulouse), and S. Schamm (CEMES-CNRS Univ. Toulouse)
o   2641   Continuous Wide Area Coating of Scratch and Corrosion Resistant Silica Films S. Tschoecke, H. Alhues, I. Dani, and S. Kaskel (Fraunhofer IWS)
o   2642   Phase Change Memory Using InSbTe Chalcogenide Materials Deposited by Metal-Organic Chemical Vapor Deposition J. Ahn, K. Park, H. Jung, S. Pammi, S. Hur, and S. Yoon (Chungnam National University)
o   2643   Processing and Deposition Mechanism of Nanocomposite Coatings Using Aerosol-Sssisted Chemical Vapor Deposition Method K. Choy, X. Hou (The University of Nottingham), V. Serín (CEMES), and N. Fleischer (NanoMaterials Ltd.)
 

Thursday, October 8, 2009

Hall F1, Level OE - Yellow

Nanostructured Systems II

Co-Chairs:
TimeAbs#Title and Authors
08:00   2644   Growth Mechanisms and Size-Dependent Characteristics of Si and SiGe Nanowires J. M. Redwing, P. Nimmatoori, K. Lew, X. Zhang, Q. Zhang, T. Clark, L. Pan, and E. Dickey (Penn State University)
08:40   2645   Preparation and Functional Characterizations of Ta2O5 Deposits Organized at the Micro- and Nanoscale M. Terranova, V. Guglielmotti, S. Orlanducci, V. Sessa, E. Tamburri, and M. Rossi (Università di Roma)
09:00   2646   Study of Si Nanowires Growth by CVD-VLS and Physical Properties T. Baron, F. Dhalluin, S. Bassem, B. Salhi, H. Abed, A. Potie, M. Panabière, S. Decossas, M. Kogelschatz (CNRS), L. Montès (INPG), F. Oehler, P. Gentile, N. Pauc, M. Den Hertog, J. Rouvière, P. Noe, and P. Ferret (CEA)
09:20   2647   Chemical Vapor Deposition of Silica Nanowires Using Heteroleptic Bis(ethylmethylamino)silane Precursor H. Kim, S. Park, and J. Heo (Seoul National University)
 

Nanostructured Systems III

TimeAbs#Title and Authors
10:00   2648   CVD of Metal Oxide Nanowires: Growth, Applications and Devices S. Mathur (University of Cologne)
10:40   2649   Multifunctional Copper Oxide Nanosystems for H2 Sustainable Production and Sensing A. Gasparotto (Padova University and INSTM), D. Barreca (ISTM-CNR and INSTM - Department of Chemistry - Padova University, Italy), P. Fornasiero, V. Gombac (Trieste University), O. Lebedev (Antwerp University), C. Maccato (Padova University and INSTM), T. Montini (Trieste University), E. Tondello (Padova University and INSTM), G. Van Tendeloo (Antwerp University), E. Comini, and G. Sberveglieri (Brescia University)
11:00   2650   Growth and Characterisation of Zinc Oxide Thin Films Containing Directly Incorporated Silicon Nanoparticles by Aerosol Assisted Chemical Vapour Deposition J. Hamilton, D. Iacopino, M. Nolan, S. O'Brien, I. M. Povey, M. Pemble (Tyndall National Institute), C. Licitra, N. Rochat, B. Florin, D. Lafond, and P. Mur (CEA-LETI, MINATEC)
11:20   2651   CVD Synthesis of Shape and Size Controlled ZnO Nanoparticles for Application as UV Filters R. R. Bacsa, P. Serp (CNRS), K. Pierzchala, and A. Sienkiewicz (Ecole Polytechnique Fédérale de Lausanne)
11:40   2652   MOCVD Grown Thin Film Nanocomposites Based on YBCO with Columnar Defects Comprised of Self-Assembled Inclusions O. V. Boytsova (Moscow State University), S. Samoilenkov (Institute of High Temperature RAS), A. Vasiliev, A. Kaul (Moscow State University), and I. Voloshin (All-Russian Electrical Engineering Institute)
 

Novel Processes, Reactor Design I

TimeAbs#Title and Authors
14:00   2653   Plasma Nanoarchitectronics: Thermokinetic Pathways from Higher-Complexity and Strongly Non-equilibrium CVD to Exotic Self-Organized Nanoassemblies K. Ostrikov (CSIRO Materials Science and Engineering), S. Xu (NTU Singapore), and I. Levchenko (University of Sydney)
14:40   2654   Locally Beam Assisted Deposition: An Overview P. Hoffmann (Ecole Polytechnique Fédérale de Lausanne)
15:00   2655   Supercritical Chemical Fluid Deposition of High Quality Compound Semiconductors M. Afzaal (University of Manchester), P. O'Brien (Manchester University), F. Cheng (University of Southampton), M. George (University of Nottingham), A. Hector (University of Southampton), S. Howdle (University of Nottingham), J. Hyde, W. Levason (University of Southampton), M. Malik (University of Manchester), K. Mallik (University of Southampton), C. Nguyen (University of Manchester), G. Reid, P. Sazio, D. Smith, M. Webster, J. Wilson, J. Yang, and W. Zhang (University of Southampton)
15:20   2656   Comparative Study on the Step Coverage Quality of Cu Film by SCFD and CVD Y. Shimogaki, T. Momose, and M. Sugiyama (University of Tokyo)
15:40 Intermission (20 Minutes)
 

Novel Processes, Reactor Design II

TimeAbs#Title and Authors
16:00   2657   Pulsed-Pressure MOCVD Science, Materials and Technology S. Krumdieck (University of Canterbury)
16:40   2658   Combinatorial Chemical Vapor Deposition of Lithium Niobate Thin Films A. Dabirian (Ecole Polytechnique Fédérale de Lausanne), Y. Kuzminykh (Ecole Polytechnique Fédéral de Lausanne), P. Hoffmann (Ecole Polytechnique Fédérale de Lausanne), S. Sandu, E. Wagner, G. Benvenuti (ABCD Technology), C. Parsons, and S. Rushworth (SAFC Hitech Limited)
17:00   2659   Initiated and Oxidative Chemical Vapor Deposition (CVD) of Conformal and Functional Polymer Films S. Baxamusa, S. Im, M. Karaman, W. Tenhaeff, S. Vaddiraju, and K. Gleason (MIT)
17:20   2660   Initiated Chemical Vapor Deposition (iCVD) of Hydrogel Polymers R. Bose, S. Nejati, and K. K. Lau (Drexel University)
17:40   2661   Processing of Biomorphic Porous Ceramics by Chemical Vapor Infiltration and Reaction (CVI-R) Technique N. Popovska (University Erlangen-Nuremberg)
 

Friday, October 9, 2009

Hall F1, Level OE - Yellow

Novel Processes, Reactor Design III

Co-Chairs:
TimeAbs#Title and Authors
08:00   2662   Combinatorial CVD: New Oxynitride Photocatalysts I. Parkin, G. Hyett, and A. Kafizas (University College London)
08:40   2663   Study of TiC Coatings on Nicalon Fiber Prepared by Pressure-Pulsed Reactive Chemical Vapor Deposition at Low Pressure I. Jouanny, S. Jacques, P. Weisbecker, B. Rufino, L. Maillé, and R. Pailler (LCTS)
09:00   2664   Liquid Droplet Evaporation in Simulations of the Flow in Pulsed-Pressure MOCVD C. Lim, H. Cave, M. Jermy, and S. Krumdieck (University of Canterbury)
09:20   2665   Influence of the Heating Mode and the Spray Introduction on Chemically Vapour Deposited Aluminium Doped Zinc Oxide Thin Films J. Garnier (Arts et Metiers Paris Tech d'Angers), R. Sreekumar (Arts et Metiers ParisTech d'Angers), and A. Bouteville (Arts & Metiers ParisTech)
 

Closing Session

TimeAbs#Title and Authors
10:00   2666   Residual Stress Mechanisms in Aluminum Oxide Films Grown by MOCVD S. Soni (Brown University), D. Samelor (CIRIMAT), B. W. Sheldon (Brown Uniiversity), C. Vahlas (CIRIMAT), and A. N. Gleizes (CIRIMAT, ENSIACET)
10:20   2667   Mass Spectrometry as a Tool to Study CVD Process A. E. Turgambaeva, V. Krisyuk (Nikolaev Institute of Inorganic Chemistry), N. Prud'Homme (CIRIMAT/ENSIACET), and C. Vahlas (CIRIMAT)
10:40   2668   Fiber-Scale Modeling of C/C Processing by Chemical Vapor Infiltration Using X-Ray CMT Images and Random Walkers G. L. Vignoles (University Bordeaux - LCTS), C. Germain (ENITAB), O. Coindreau, C. Mulat, and W. Ros (University Bordeaux)
11:00   2669   Fabrication of Micro- and Nanoelectrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214 and PMMA G. Papadimitropoulos (Institute of Microelectronics), S. Cibella, R. Leoni (Instintuto di Fotonica e Nanotecnologie, CNR), A. Arapoyianni (University of Athens), and D. Davazoglou (Institute of Microelectronics-NCSR)
11:20   2670   Dy3+:Al2O3 and (Dy3++Cr3+):Al2O3 Films for Temperature Sensor Applications Derived by Thermal CVD and Sol-Gel Techniques C. Eckert, C. Pflitsch, and B. Atakan (University of Duisburg-Essen)
11:40 Concluding Remarks (20 Minutes)